SI3433CDV-T1-E3【PDF 1/11 页】MOSFET P-CH 20V 6A 6TSOP

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Sheet目录508

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New Product

Si3433CDV

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

FEATURES

V DS (V)

- 20

R DS(on) ( Ω )

0.038 at V GS = - 4.5 V

0.046 at V GS = - 2.5 V

0.060 at V GS = - 1.8 V

I D (A) a

-6

Q g (Typ.)

18 nC

? Halogen-free According to IEC 61249-2-21

Available

? TrenchFET ? Power MOSFET

APPLICATIONS

? Load Switch

? Notebook

TSOP-6

Top View

(4) S

3 mm

(3) G

Marking Code

XXX

Lot Tracea b ility

and Date Code

2. 8 5 mm

Part # Code

Orderin g Information: Si3433CD V -T1-E3 (Lead (P b )-free)

Si3433CD V -T1-GE3 (Lead (P b )-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

(1, 2, 5, 6) D

P-Channel MOSFET

Parameter

Drain-Source Voltage

Gate-Source Voltage

T C = 25 °C

Symbol

V DS

V GS

Limit

- 20

± 8.0

- 6.0 a

Unit

Continuous Drain Current (T J = 150 °C)

Pulsed Drain Current

Continuous Source-Drain Diode Current

T C = 70 °C

T A = 25 °C

T A = 70 °C

T C = 25 °C

T A = 25 °C

T C = 25 °C

I D

I DM

I S

- 6.0 a

- 5.2 b, c

- 4.2 b, c

- 20

- 2.7

- 1.3 b, c

3.3

Maximum Power Dissipation

T C = 70 °C

T A = 25 °C

P D

2.1

1.6 b, c

T A = 70 °C

1.0 b, c

Operating Junction and Storage Temperature Range

T J , T stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient

b, d

Maximum Junction-to-Foot (Drain)

t ≤ 5s

Steady State

R thJA

R thJF

°C/W

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 68803

S09-0387-Rev. B, 09-Mar-09

www.vishay.com

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